Optimized to improve everyday PC productivity, including web-browsing, email, multimedia and gaming. Enables you to boot up your computer in as little as 15 seconds. Samsung RAPID technology boosts overall PC performance by using idle DRAM as an ultra-fast buffer*

*Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer 2010. Performance may vary based on SSD’s firmware version, system hardware & configuration.

100-percent genuine Samsung memory components from the #1 memory manufacturer in the world. Superior multi- tasking performance with 5th-generation 3- Core Samsung MEX Controller.

Ultra energy efficient - improves battery life by up to 45 minutes**

*Power consumption measured with MobileMark 2007 in Windows 7. Values calculated using laptop computer and represent system-level power consumption.

Easier-than-ever upgrade tools – including One-Stop Install Navigator, a comprehensive guide for software setup, data migration process and hardware installation. Samsung Data Migration simply and safely migrates your existing data to your new SSD -- making the installation process as smooth as possible. Laptop Upgrade Kit includes SATA to USB 3.0 cable for data migration up to 3 times faster than USB 2.0

Type
Product Type	2.5" SATA III
Series	840 EVO

Storage
Capacity	120GB

Features
Sequential Read Speed	540 MB/s
Sequential Write Speed	410 MB/s
Random Read Speed	94K
Random Write Speed	35K

Power
Power Consumption (W)	.045W
Voltage	5V ± 5%

Operating Systems
Compatible	Windows 8 (32-bit and 64-bit), Windows 7 (32-bit and 64-bit), Vista, XP, MAC OSX, Linux

Environmental Specs
Operating Temperature	32ᵒF to 140ᵒF (Operating)

Dimensions (W x H x D)
Product	.28" x 2.75" x 3.94"

Weight
Product	Max .12 lb.

Warranty
Product	3 Years

Product Contents
Contents	Migration Software

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850 EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.

Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.

The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.

***Sustained Performance (250 GB) : 3,300 IOPS (840 EVO) > 6,500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test