Specifications: HX316C9SR/4 4GB (4GB 512M x 64-Bit) DDR3-1600 CL9 240-Pin DIMM Kingston Desktop DDR3 RAM 1600Mhz HyperX HX316C9SR/4 is a 512M x 64-bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 1Rx8, memory module, based on eight 512M x 8-bit FBGA components per module. Each module supports Intel® XMP (Extreme Memory Profiles). Each module has been tested to run at DDR3-1600 at a low latency timing of 9-9-9 at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows:
XMP TIMING PARAMETERS • JEDEC: DDR3-1600 CL11-11-11 @1.5V • XMP Profile #1: DDR3-1600 CL9-9-9 @1.5V Features • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal banks • Programmable CAS latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº • Asynchronous Reset • Height 1.311” (33.30mm), w/heatsink, single sided component
SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh 260ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 35ns (min.) Power (Operating) TBD W* UL Rating 94 V - 0 Operating Temperature 0 to 85 degree celcius Storage Temperature -55 to +100 degree celcius
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