FET TypetN-Channelt
TechnologytMOSFET (Metal Oxide)t
Drain to Source Voltage (Vdss)t30Vt
Current - Continuous Drain (Id) @ 25°Ct3.6A (Tc)t
Drive Voltage (Max Rds On, Min Rds On)t2.5V, 4.5Vt
Vgs(th) (Max) @ Idt1.5V @ 250µAt
Gate Charge (Qg) (Max) @ Vgst10nC @ 10Vt
Input Capacitance (Ciss) (Max) @ Vdst320pF @ 15Vt
Vgs (Max)t±12Vt
FET Featuret-t
Power Dissipation (Max)t1.1W (Ta), 1.7W (Tc)t
Rds On (Max) @ Id, Vgst68 mOhm @ 2.9A, 4.5Vt
Operating Temperaturet-55°C ~ 150°C (TJ)t
Mounting TypetSurface Mountt
Supplier Device PackagetSOT-23-3 (TO-236)t
Package / CasetTO-236-3, SC-59, SOT-23-3
