What is 3D V-NAND and how does it differ from existing technology?

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations・ performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

Optimise daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850 EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus・ you also gain optimised random performance in all QD for client PC usage scenario. 

*PCmark7 (250 GB ) : 6・700 (840 EVO) > 7・600 (850 EVO)

**Random Write (QD32・ 120 GB) : 36・000 IOPS (840 EVO) > 88・000 IOPS (850 EVO)

Get into the fast lane with the improved RAPID mode

Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB・ in the previous 840 EVO version・ to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth. 

*PCMARK7 RAW (250 GB) : 7・500 > 15・000 (Rapid mode)

Guaranteed endurance and reliability bolstered by 3D V-NAND technology

The 850 EVO delivers guaranteed endurance and reliability by doubling the TBW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.

*TBW : Total Bytes Written

**TBW : 43 (840 EVO) > 75 (850 EVO 120/250 GB)・ 150 (850 EVO 500/1 TB)

***Sustained Performance (250 GB) : 3・300 IOPS (840 EVO) > 6・500 IOPS (850 EVO)・ Performance measured after 12 hours “Random Write” test