Unlock Your Computer's Potential
Samsung's 850 EVO series SSD is the industry's #1 best-selling* SSD and is perfect for everyday computing. Powered by Samsung's V-NAND technology, the 850 EVO transforms the everyday computing experience with optimized performance and endurance. Designed to fit desktop PCs, laptops, and ultrabooks, the 850 EVO comes in a wide range of capacities and form factors.
Uncompromised Performance
The 850 EVO optimizes performance for your daily computing tasks, boasting sequential write speeds up to 520 MB/s with TurboWrite technology and sequential read speeds up to 540 MB/s. Plus, RAPID mode to further boost performance for up to 2x faster** data processing speeds by utilizing unused PC memory as cache storage.
Guaranteed Endurance and Reliability
The Samsung 850 EVO maintains high performance, optimized endurance, AES 256-bit hardware-based encryption***, Dynamic Thermal Guard, and a 5 year limited warranty****.
Capacities Range up to 4TB
More storage options that are just right for your needs. Samsung offers the 850 EVO in a full range of capacities up to 4TB. With the industry’s first 4TB SSD for client PCs, you can store more data on a single SSD than ever before.
Multiple Form Factors for Almost Any Need
Samsung has designed the 850 EVO in multiple form factors with compatibility in mind. The 2.5-inch size is designed to fit most desktop PCs and laptops, while the SATA-based M.2 and mSATA are ideal for ultra-slim mobile computing.
Type
Product Type
Solid State Drive
Series
EVO
Interface
SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
Storage
Capacity
250GB
Key Features
Sequential Read Speed
Up to 540 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Speed
Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32):Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configuration Random Read (4KB, QD1):Up to 10,000 IOPS Random Read* Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32):Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configurationRandom Write (4KB, QD1):Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Memory Speed
Samsung 32 layer 3D V-NANDSamsung 512 MB Low Power DDR3 SDRAM
Controller
Samsung MGX Controller
Trim Support
Yes
AES Encryption
AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)
Internal Storage
Yes
Temperature proof
Yes
General
Power Consumption (W)
50 MW * Actual power consumption may vary depending on system hardware & configuration*Average: 2.4 W *Maximum: 2.4 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration
Voltage
5V ± 5% Allowable voltage
Reliability (MTBF)
2 Million Hours Reliability (MTBF)
Environmental Specs
Operating Temperature
32ºF - 158ºF
Form Factor
Product
2.5" SATA III
Dimensions (W x D x H)
Product
3.94" x 2.75" x 0.27"