Specifications

• CL(IDD): 11 cycles
• Row Cycle Time (tRCmin): 48.125ns(min.)
• Refresh to Active/Refresh Command Time (tRFCmin): 260ns(min.)
• Row Active Time (tRASmin): 35ns (min.)
• Maximum Operating Power: (1.35V) = TBD W* (*Power will vary depending on the SDRAM used.)
• UL Rating: 94 V - 0
• Operating Temperature: 0° C to +85° C
• Storage Temperature: -55° C to +100° C

Highlights

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) • 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB Height: 0.740” (18.75mm) or 1.180” (30.00mm)
• Product Lifetime Warranty